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- Manufacturer No：IRF634PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF634PBF
- SKU：146892
- Description：MOSFET N-CH 250V 8.1A TO-220AB
User Guide
User Guide
IRF634PBF Details
MOSFET N-CH 250V 8.1A TO-220AB
IRF634PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Published: 2011
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 19 ns
- Drain to Source Resistance: 450mOhm
- Nominal Vgs: 4 V
- Continuous Drain Current (ID): 8.1A
- Turn On Delay Time: 9.6 ns
- Power Dissipation: 74W
- Power Dissipation-Max: 74W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
- Input Capacitance: 770pF
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Drain to Source Voltage (Vdss): 250V
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Length: 10.41mm
- Resistance: 450mOhm
- Weight: 6.000006g
- Turn-Off Delay Time: 42 ns
- Height: 9.01mm
- Rise Time: 21ns
- Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
- Rds On Max: 450 mΩ
- Current - Continuous Drain (Id) @ 25°C: 8.1A Tc
- Rds On (Max) @ Id, Vgs: 450mOhm @ 5.1A, 10V
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