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- Manufacturer No：IRF730
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF730
- SKU：146989
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 5.5A Tc 5.5A 74W 14ns
User Guide
User Guide
IRF730 Details
Tube Through Hole N-Channel Single Mosfet Transistor 5.5A Tc 5.5A 74W 14ns
IRF730 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Published: 2012
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 400V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Drain to Source Resistance: 1Ohm
- Turn On Delay Time: 10 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 5.5A
- Length: 10.41mm
- Turn-Off Delay Time: 38 ns
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Power Dissipation: 74W
- Current - Continuous Drain (Id) @ 25°C: 5.5A Tc
- Power Dissipation-Max: 74W Tc
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Width: 4.7mm
- Supplier Device Package: TO-220AB
- Rise Time: 15ns
- Current Rating: 5.5A
- Fall Time (Typ): 14 ns
- Weight: 6.000006g
- Rds On Max: 1 Ω
- Height: 9.01mm
- Input Capacitance: 700pF
- Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 3.3A, 10V
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