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- Manufacturer No：AO4447A
- Manufacturer：Alpha & Omega Semiconductor
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：AO4447A
- SKU：1474578
- Description：MOSFET P-CH 30V 17A 8-SOIC
User Guide
User Guide
AO4447A Details
MOSFET P-CH 30V 17A 8-SOIC
AO4447A Specification Parameters
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Number of Terminations: 8
- Terminal Position: DUAL
- Factory Lead Time: 16 Weeks
- Transistor Element Material: SILICON
- Drain to Source Voltage (Vdss): 30V
- Part Status: Last Time Buy
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 17A
- Drive Voltage (Max Rds On,Min Rds On): 4V 10V
- Drain-source On Resistance-Max: 0.007Ohm
- Vgs(th) (Max) @ Id: 1.6V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 17A Ta
- Rds On (Max) @ Id, Vgs: 7m Ω @ 17A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- Number of Pins: 8
- Pin Count: 8
- Terminal Form: GULL WING
- Published: 2006
- Gate to Source Voltage (Vgs): 20V
- DS Breakdown Voltage-Min: 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Power Dissipation: 3.1W
- Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Power Dissipation-Max: 3.1W Ta
- Gate Charge (Qg) (Max) @ Vgs: 105nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 15V
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