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- Manufacturer No：IRFD9123
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9123
- SKU：147758
- Description：Tube Through Hole P-Channel Single Mosfet Transistor 1A Ta 1A 1.3W -100V
User Guide
User Guide
IRFD9123 Details
Tube Through Hole P-Channel Single Mosfet Transistor 1A Ta 1A 1.3W -100V
IRFD9123 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Terminal Position: DUAL
- Pin Count: 4
- Number of Terminations: 3
- Qualification Status: Not Qualified
- Reach Compliance Code: unknown
- Continuous Drain Current (ID): 1A
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 4V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain Current-Max (Abs) (ID): 0.8A
- Drain to Source Breakdown Voltage: -100V
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Weight: 639.990485mg
- JESD-30 Code: R-PDIP-T3
- JEDEC-95 Code: TO-250AA
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Number of Pins: 4
- Packaging: Tube
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 100V
- Published: 2015
- Transistor Element Material: SILICON
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- FET Type: P-Channel
- Max Power Dissipation: 1.3W
- Package / Case: 4-DIP (0.300, 7.62mm)
- Drain-source On Resistance-Max: 0.8Ohm
- Current - Continuous Drain (Id) @ 25°C: 1A Ta
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
- Rds On (Max) @ Id, Vgs: 600m Ω @ 600mA, 10V
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