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- Manufacturer No：IRFD9010
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9010
- SKU：151632
- Description：MOSFET P-CH 50V 1.1A 4-DIP
User Guide
User Guide
IRFD9010 Details
MOSFET P-CH 50V 1.1A 4-DIP
IRFD9010 Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- RoHS Status: Non-RoHS Compliant
- Factory Lead Time: 6 Weeks
- Pin Count: 4
- Number of Terminations: 3
- Lead Free: Contains Lead
- JESD-609 Code: e0
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Terminal Finish: TIN LEAD
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- FET Type: P-Channel
- Turn-Off Delay Time: 13 ns
- Drain to Source Breakdown Voltage: -50V
- Drain-source On Resistance-Max: 0.5Ohm
- Turn On Delay Time: 6.1 ns
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Weight: 639.990485mg
- Width: 6.29mm
- Current Rating: -1.1A
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Radiation Hardening: No
- Terminal Position: DUAL
- Number of Pins: 4
- Packaging: Tube
- Pbfree Code: no
- Drain to Source Voltage (Vdss): 50V
- Published: 2012
- Transistor Element Material: SILICON
- Length: 5mm
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 1.1A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Voltage - Rated DC: -50V
- Package / Case: 4-DIP (0.300, 7.62mm)
- Fall Time (Typ): 39 ns
- Rise Time: 47 ns
- Height: 3.37mm
- Power Dissipation-Max: 1W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
- Current - Continuous Drain (Id) @ 25°C: 1.1A Tc
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