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- Manufacturer No：IRFI9620G
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFI9620G
- SKU：152060
- Description：MOSFET P-CH 200V 3A TO220FP
User Guide
User Guide
IRFI9620G Details
MOSFET P-CH 200V 3A TO220FP
IRFI9620G Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Continuous Drain Current (ID): 3A
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Width: 4.83mm
- Power Dissipation: 30W
- Drain to Source Resistance: 1.5Ohm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Voltage - Rated DC: -3V
- Turn On Delay Time: 8.8 ns
- Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
- Rds On Max: 1.5 Ω
- Rise Time: 27ns
- Length: 10.63mm
- Input Capacitance: 340pF
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Published: 2016
- Drain to Source Voltage (Vdss): 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Supplier Device Package: TO-220-3
- FET Type: P-Channel
- Height: 9.8mm
- Fall Time (Typ): 19 ns
- Weight: 6.000006g
- Turn-Off Delay Time: 7.3 ns
- Power Dissipation-Max: 30W Tc
- Current Rating: -3A
- Drain to Source Breakdown Voltage: -200V
- Current - Continuous Drain (Id) @ 25°C: 3A Tc
- Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 15V
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