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- Manufacturer No：IRFD9120
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9120
- SKU：155516
- Description：Tube Through Hole P-Channel MOSFET (Metal Oxide) Mosfet Transistor 1A Ta 1A 1.3W 29ns
User Guide
User Guide
IRFD9120 Details
Tube Through Hole P-Channel MOSFET (Metal Oxide) Mosfet Transistor 1A Ta 1A 1.3W 29ns
IRFD9120 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Drain to Source Voltage (Vdss): 100V
- Continuous Drain Current (ID): 1A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Input Capacitance: 390pF
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Power Dissipation: 1.3W
- Package / Case: 4-DIP (0.300, 7.62mm)
- Drain to Source Breakdown Voltage: -100V
- Rds On Max: 600 mΩ
- Power Dissipation-Max: 1.3W Ta
- Height: 3.37mm
- Nominal Vgs: -4 V
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Published: 2016
- Max Operating Temperature: 175°C
- REACH SVHC: Unknown
- Length: 5mm
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- FET Type: P-Channel
- Drain to Source Resistance: 600mOhm
- Turn-Off Delay Time: 21 ns
- Fall Time (Typ): 29 ns
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Turn On Delay Time: 9.6 ns
- Current - Continuous Drain (Id) @ 25°C: 1A Ta
- Rise Time: 29ns
- Width: 6.29mm
- Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
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