IRF610
Vishay Siliconix
Moisture Sensitivity Level (MSL)
1 (Unlimited)Mounting Type
Through HoleMount
Through HoleNumber of Elements
1Number of Channels
1Radiation Hardening
NoRoHS Status
Non-RoHS CompliantMin Operating Temperature
-55°CPart Status
ObsoletePackaging
TubeNumber of Pins
3Lead Free
Contains LeadVoltage - Rated DC
200VDrain to Source Voltage (Vdss)
200VDrain to Source Breakdown Voltage
200VPublished
2011Max Operating Temperature
150°CREACH SVHC
UnknownDrive Voltage (Max Rds On,Min Rds On)
10VElement Configuration
SingleGate to Source Voltage (Vgs)
20VPower Dissipation
3WOperating Temperature
-55°C~150°C TJFET Type
N-ChannelTechnology
MOSFET (Metal Oxide)Vgs (Max)
±20VPackage / Case
TO-220-3Width
4.7mmSupplier Device Package
TO-220ABDrain to Source Resistance
1.5OhmVgs(th) (Max) @ Id
4V @ 250μACurrent Rating
3.3AContinuous Drain Current (ID)
3.3ATurn-Off Delay Time
14 nsLength
10.41mmWeight
6.000006gNominal Vgs
4 VRise Time
17nsRds On Max
1.5 ΩTurn On Delay Time
8.2 nsHeight
9.01mmInput Capacitance
140pFFall Time (Typ)
8.9 nsGate Charge (Qg) (Max) @ Vgs
8.2nC @ 10VPower Dissipation-Max
36W TcInput Capacitance (Ciss) (Max) @ Vds
140pF @ 25VCurrent - Continuous Drain (Id) @ 25°C
3.3A TcRds On (Max) @ Id, Vgs
1.5Ohm @ 2A, 10V