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- Manufacturer No：IRF640PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF640PBF
- SKU：158236
- Description：Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB
User Guide
User Guide
IRF640PBF Details
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB
IRF640PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 18A
- Resistance: 180mOhm
- Turn On Delay Time: 14 ns
- Power Dissipation: 125W
- Weight: 6.000006g
- Rds On Max: 180 mΩ
- Power Dissipation-Max: 125W Tc
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
- RoHS Status: ROHS3 Compliant
- Packaging: Bulk
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Current Rating: 18A
- Turn-Off Delay Time: 45 ns
- Drain to Source Resistance: 180mOhm
- Length: 10.41mm
- Nominal Vgs: 2 V
- Fall Time (Typ): 36 ns
- Input Capacitance: 1.3nF
- Current - Continuous Drain (Id) @ 25°C: 18A Tc
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Rise Time: 51ns
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