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  • Manufacturer No:
    IRF740
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    159819
  • Description:
    Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 125W 24ns
  • Quantity:
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Inventory:36102
  • Qty Unit Price price
  • 1 $1366.315 $1366.315
  • 10 $1352.787 $13527.87
  • 100 $1339.393 $133939.3
  • 1000 $1326.131 $1326131
  • 10000 $1313 $13130000

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  • Manufacturer No:
    IRF740
  • Manufacturer:
    Vishay Siliconix
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    IRF740
  • SKU:
    159819
  • Description:
    Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 125W 24ns

IRF740 Details

Tube Through Hole N-Channel Single Mosfet Transistor 10A Tc 10A 125W 24ns

IRF740 Specification Parameters

  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Through Hole
  • Number of Channels: 1
  • RoHS Status: Non-RoHS Compliant
  • Part Status: Obsolete
  • Number of Pins: 3
  • Published: 2012
  • Drive Voltage (Max Rds On,Min Rds On): 10V
  • Current Rating: 10A
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Voltage (Vdss): 400V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Length: 10.41mm
  • Power Dissipation: 125W
  • Drain to Source Resistance: 550mOhm
  • Current - Continuous Drain (Id) @ 25°C: 10A Tc
  • Height: 9.01mm
  • Input Capacitance: 1.4nF
  • Rds On Max: 550 mΩ
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • Radiation Hardening: No
  • Min Operating Temperature: -55°C
  • Packaging: Tube
  • Lead Free: Contains Lead
  • Max Operating Temperature: 150°C
  • Element Configuration: Single
  • Continuous Drain Current (ID): 10A
  • Voltage - Rated DC: 400V
  • Drain to Source Breakdown Voltage: 400V
  • FET Type: N-Channel
  • Vgs (Max): ±20V
  • Width: 4.7mm
  • Turn-Off Delay Time: 50 ns
  • Turn On Delay Time: 14 ns
  • Fall Time (Typ): 24 ns
  • Weight: 6.000006g
  • Power Dissipation-Max: 125W Tc
  • Rise Time: 27ns
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V

Excellent

Based on reviews

Excellent

Based on reviews

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