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- Manufacturer No：IRF830
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF830
- SKU：160946
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 4.5A Tc 4.5A 74W 5ns
User Guide
User Guide
IRF830 Details
Tube Through Hole N-Channel Single Mosfet Transistor 4.5A Tc 4.5A 74W 5ns
IRF830 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Vgs (Max): ±20V
- Current Rating: 4.5A
- Supplier Device Package: TO-220AB
- Width: 4.6mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 5 ns
- Turn-Off Delay Time: 42 ns
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Height: 9.01mm
- Power Dissipation: 74W
- Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Packaging: Tube
- Published: 2016
- Min Operating Temperature: -65°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Continuous Drain Current (ID): 4.5A
- Rise Time: 8ns
- Drain to Source Resistance: 1.5Ohm
- Length: 10.4mm
- Weight: 6.000006g
- Rds On Max: 1.5 Ω
- Turn On Delay Time: 8.2 ns
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Power Dissipation-Max: 74W Tc
- Input Capacitance: 610pF
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