IRFP31N50LPBFVishay Siliconix
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    • Manufacturer No：
      IRFP31N50LPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      161505
    • Description：
      MOSFET N-CH 500V 31A TO-247AC
    • Quantity：
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    Inventory:1433
    • Qty Unit Price price
    • 1 $1232.078 $1232.078
    • 10 $1219.879 $12198.79
    • 100 $1207.8 $120780
    • 1000 $1195.841 $1195841
    • 10000 $1184 $11840000

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    • Manufacturer No：
      IRFP31N50LPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFP31N50LPBF
    • SKU：
      161505
    • Description：
      MOSFET N-CH 500V 31A TO-247AC

    User Guide

    User Guide

    IRFP31N50LPBF Details

    MOSFET N-CH 500V 31A TO-247AC

    IRFP31N50LPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Min Operating Temperature: -55°C
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Max Operating Temperature: 150°C
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Voltage (Vdss): 500V
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Vgs (Max): ±30V
    • Supplier Device Package: TO-247-3
    • Resistance: 180mOhm
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Continuous Drain Current (ID): 31A
    • Nominal Vgs: 5 V
    • Rds On Max: 180 mΩ
    • Weight: 38.000013g
    • Power Dissipation: 460W
    • Rise Time: 115ns
    • Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
    • Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Contact Plating: Tin
    • Threshold Voltage: 5V
    • Packaging: Tube
    • Published: 2011
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Package / Case: TO-247-3
    • Length: 15.87mm
    • Drain to Source Resistance: 180mOhm
    • Turn On Delay Time: 28 ns
    • Width: 5.31mm
    • Height: 20.7mm
    • Fall Time (Typ): 53 ns
    • Turn-Off Delay Time: 54 ns
    • Input Capacitance: 5nF
    • Current - Continuous Drain (Id) @ 25°C: 31A Tc
    • Power Dissipation-Max: 460W Tc
    • Rds On (Max) @ Id, Vgs: 180mOhm @ 19A, 10V
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