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- Manufacturer No：IRFBE20PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFBE20PBF
- SKU：163699
- Description：Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) TO-220AB
User Guide
User Guide
IRFBE20PBF Details
Trans MOSFET N-CH 800V 1.8A 3-Pin(3+Tab) TO-220AB
IRFBE20PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Drain to Source Voltage (Vdss): 800V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Continuous Drain Current (ID): 1.8A
- Length: 10.41mm
- Drain to Source Resistance: 6.5Ohm
- Weight: 6.000006g
- Power Dissipation: 54W
- Turn-Off Delay Time: 58 ns
- Turn On Delay Time: 8.2 ns
- Current - Continuous Drain (Id) @ 25°C: 1.8A Tc
- Power Dissipation-Max: 54W Tc
- Rds On Max: 6.5 Ω
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Contact Plating: Tin
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Published: 2014
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Threshold Voltage: 4V
- Voltage - Rated DC: 800V
- Drain to Source Breakdown Voltage: 800V
- Width: 4.7mm
- Current Rating: 1.8A
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Resistance: 6.5Ohm
- Fall Time (Typ): 27 ns
- Nominal Vgs: 4 V
- Rise Time: 17ns
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 25V
- Input Capacitance: 530pF
- Rds On (Max) @ Id, Vgs: 6.5Ohm @ 1.1A, 10V
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