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  • Manufacturer No:
    DMG4466SSS-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMG4466SSS-13
  • SKU:
    1722834
  • Description:
    MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD

DMG4466SSS-13 Details

MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD

DMG4466SSS-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Gate to Source Voltage (Vgs): 25V
  • Element Configuration: Single
  • Continuous Drain Current (ID): 10A
  • Published: 2017
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Height: 1.5mm
  • Pulsed Drain Current-Max (IDM): 60A
  • Length: 4.95mm
  • Subcategory: FET General Purpose Powers
  • Rise Time: 7.9 ns
  • Fall Time (Typ): 3.1 ns
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Current - Continuous Drain (Id) @ 25°C: 10A Ta
  • Turn-Off Delay Time: 14.6 ns
  • Rds On (Max) @ Id, Vgs: 23m Ω @ 10A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 8
  • Pin Count: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Factory Lead Time: 15 Weeks
  • Drain to Source Breakdown Voltage: 30V
  • Operating Temperature: -55°C~150°C TJ
  • Packaging: Cut Tape (CT)
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Additional Feature: HIGH RELIABILITY
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Vgs (Max): ±25V
  • Width: 3.95mm
  • Turn On Delay Time: 2.9 ns
  • Vgs(th) (Max) @ Id: 2.4V @ 250μA
  • Drain-source On Resistance-Max: 0.023Ohm
  • Weight: 73.992255mg
  • Power Dissipation: 1.42W
  • Power Dissipation-Max: 1.42W Ta

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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