Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:225000
- Qty Unit Price price
- 1 $0.042 $0.042
- 10 $0.041 $0.41
- 100 $0.04 $4
- 1000 $0.039 $39
- 10000 $0.038 $380
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：BC807-40-7-F
- Manufacturer：Diodes Incorporated
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：BC807-40-7-F
- SKU：1723685
- Description：DIODES INC. - BC807-40-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
User Guide
User Guide
BC807-40-7-F Details
DIODES INC. - BC807-40-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE
BC807-40-7-F Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- REACH SVHC: No SVHC
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2008
- Element Configuration: Single
- Frequency: 100MHz
- Gain Bandwidth Product: 100MHz
- Current - Collector (Ic) (Max): 500mA
- Transistor Application: SWITCHING
- Emitter Base Voltage (VEBO): -5V
- Additional Feature: HIGH RELIABILITY
- Polarity/Channel Type: PNP
- Current - Collector Cutoff (Max): 100nA
- Length: 3.05mm
- Weight: 7.994566mg
- Max Power Dissipation: 310mW
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage: -45V
- Collector Emitter Saturation Voltage: -700mV
- Base Part Number: BC807
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Factory Lead Time: 15 Weeks
- Transition Frequency: 100MHz
- Operating Temperature: -55°C~150°C TJ
- Width: 1.4mm
- Height: 1.1mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Transistor Type: PNP
- Max Breakdown Voltage: 45V
- Subcategory: Other Transistors
- hFE Min: 250
- Collector Base Voltage (VCBO): -50V
- Power Dissipation: 310mW
- Max Collector Current: -500mA
- Collector Emitter Voltage (VCEO): -45V
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA 1V
Search for similar products
BC807-40-7-F Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & BC807-40-7-F
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
