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Inventory:993000
  • Qty Unit Price price
  • 1 $0.078 $0.078
  • 10 $0.077 $0.77
  • 100 $0.076 $7.6
  • 1000 $0.075 $75
  • 10000 $0.0741 $741

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  • Manufacturer No:
    DMP2004K-7
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMP2004K-7
  • SKU:
    1731787
  • Description:
    Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23

DMP2004K-7 Details

Transistor: P-MOSFET; unipolar; -20V; -0.6A; 0.55W; SOT23

DMP2004K-7 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Terminal Position: DUAL
  • Number of Pins: 3
  • Terminal Form: GULL WING
  • Factory Lead Time: 16 Weeks
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2010
  • Element Configuration: Single
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Transistor Application: SWITCHING
  • Operating Mode: ENHANCEMENT MODE
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Resistance: 900mOhm
  • Drain Current-Max (Abs) (ID): 0.6A
  • Turn On Delay Time: 8.5 ns
  • Weight: 7.994566mg
  • Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
  • Rise Time: 4.3 ns
  • Feedback Cap-Max (Crss): 20 pF
  • Current - Continuous Drain (Id) @ 25°C: 600mA Ta
  • Turn-Off Delay Time: 20.2 ns
  • Power Dissipation-Max: 550mW Ta
  • Additional Feature: ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 3
  • Pin Count: 3
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Drain to Source Voltage (Vdss): 20V
  • Length: 2.9mm
  • Width: 1.3mm
  • Height: 1.1mm
  • Gate to Source Voltage (Vgs): 8V
  • Subcategory: Other Transistors
  • FET Type: P-Channel
  • Drain to Source Breakdown Voltage: -20V
  • Vgs(th) (Max) @ Id: 1V @ 250μA
  • Vgs (Max): ±8V
  • Power Dissipation: 550mW
  • Threshold Voltage: -1V
  • Continuous Drain Current (ID): -600mA
  • Fall Time (Typ): 19.2 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
  • Rds On (Max) @ Id, Vgs: 900m Ω @ 430mA, 4.5V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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