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  • Manufacturer No:
    2DD2661-13
  • Manufacturer:
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    Get the PDF file
  • SKU:
    1738167
  • Description:
    DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
  • Quantity:
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Inventory:26
  • Qty Unit Price price
  • 1 $0.134 $0.134
  • 10 $0.132 $1.32
  • 100 $0.13 $13
  • 1000 $0.128 $128
  • 10000 $0.126 $1260

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  • Manufacturer No:
    2DD2661-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    2DD2661-13
  • SKU:
    1738167
  • Description:
    DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE

2DD2661-13 Details

DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE

2DD2661-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 3
  • REACH SVHC: No SVHC
  • Terminal Finish: Matte Tin (Sn)
  • Collector Emitter Voltage (VCEO): 12V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Factory Lead Time: 15 Weeks
  • Collector Base Voltage (VCBO): 15V
  • Emitter Base Voltage (VEBO): 6V
  • Operating Temperature: -55°C~150°C TJ
  • Length: 4.5mm
  • Transistor Type: NPN
  • Height: 1.5mm
  • Current - Collector Cutoff (Max): 100nA ICBO
  • Package / Case: TO-243AA
  • Power - Max: 900mW
  • Frequency: 170MHz
  • Gain Bandwidth Product: 170MHz
  • Weight: 51.993025mg
  • Vce Saturation (Max) @ Ib, Ic: 180mV @ 50mA, 1A
  • Manufacturer Package Identifier: 2DD2661-13
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 4
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Collector Emitter Breakdown Voltage: 12V
  • Max Breakdown Voltage: 12V
  • Published: 2008
  • Element Configuration: Single
  • Power Dissipation: 2W
  • Max Collector Current: 2A
  • Width: 2.5mm
  • Terminal Form: FLAT
  • Transistor Application: SWITCHING
  • Polarity/Channel Type: NPN
  • Subcategory: Other Transistors
  • Case Connection: COLLECTOR
  • Max Power Dissipation: 900mW
  • JESD-30 Code: R-PSSO-F3
  • Transition Frequency: 170MHz
  • Collector Emitter Saturation Voltage: 180mV
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA 2V
  • Base Part Number: 2DD2661

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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