Add to like
Add to project list
DMN63D8LDW-7123
Inventory:139720
  • Qty Unit Price price
  • 1 $475.985 $475.985
  • 10 $471.272 $4712.72
  • 100 $466.605 $46660.5
  • 1000 $461.985 $461985
  • 10000 $457.41 $4574100

Not the price you want? Send RFQ Now and we'll contact you ASAP

DMN63D8LDW-7
  • Manufacturer No:
    DMN63D8LDW-7
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMN63D8LDW-7
  • SKU:
    1738741
  • Description:
    MOSFET 2N-CH 30V 0.22A SOT363

DMN63D8LDW-7 Details

MOSFET 2N-CH 30V 0.22A SOT363

DMN63D8LDW-7 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Pins: 6
  • REACH SVHC: No SVHC
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Breakdown Voltage: 30V
  • Transistor Application: SWITCHING
  • Threshold Voltage: 1.5V
  • Additional Feature: HIGH RELIABILITY
  • Power Dissipation: 300mW
  • Length: 2.2mm
  • Turn-Off Delay Time: 12 ns
  • Continuous Drain Current (ID): 220mA
  • FET Feature: Logic Level Gate
  • Weight: 6.010099mg
  • Vgs(th) (Max) @ Id: 1.5V @ 250μA
  • Turn On Delay Time: 3.3 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs: 870nC @ 10V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Terminal Form: GULL WING
  • Published: 2012
  • Time@Peak Reflow Temperature-Max (s): 40
  • Element Configuration: Dual
  • Factory Lead Time: 15 Weeks
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Height: 1.1mm
  • Operating Mode: ENHANCEMENT MODE
  • Max Power Dissipation: 300mW
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Width: 1.35mm
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Drain-source On Resistance-Max: 4.5Ohm
  • Reference Standard: AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • Fall Time (Typ): 6.3 ns
  • Rise Time: 3.2 ns
  • Rds On (Max) @ Id, Vgs: 2.8 Ω @ 250mA, 10V
  • Base Part Number: DMN63D8L

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

Excellent

Based on reviews

Excellent

Based on reviews

LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data, please read our Term & Condition and Privacy Policy to find out more.
Our social media
We support logistics
We Accept Payment Via