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Inventory:16361
  • Qty Unit Price price
  • 1 $0.813 $0.813
  • 10 $0.804 $8.04
  • 100 $0.796 $79.6
  • 1000 $0.788 $788
  • 10000 $0.78 $7800

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  • Manufacturer No:
    DMP6023LSS-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    DMP6023LSS-13
  • SKU:
    1739503
  • Description:
    MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF

DMP6023LSS-13 Details

MOSFET P-Ch 60V Enh Mode 20Vgs 53.1nC 2569pF

DMP6023LSS-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Gate to Source Voltage (Vgs): 20V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Additional Feature: HIGH RELIABILITY
  • Configuration: SINGLE WITH BUILT-IN DIODE
  • FET Type: P-Channel
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Drain to Source Breakdown Voltage: -60V
  • Rise Time: 7.1 ns
  • Drain-source On Resistance-Max: 0.025Ohm
  • Current - Continuous Drain (Id) @ 25°C: 6.6A Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 2569pF @ 30V
  • Capacitance: 2.569nF
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • JESD-609 Code: e3
  • Peak Reflow Temperature (Cel): NOT SPECIFIED
  • Number of Terminations: 8
  • Published: 2013
  • Drain to Source Voltage (Vdss): 60V
  • Transistor Element Material: SILICON
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM): 50A
  • Factory Lead Time: 23 Weeks
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Turn On Delay Time: 6 ns
  • Turn-Off Delay Time: 110 ns
  • Continuous Drain Current (ID): 6.6A
  • Fall Time (Typ): 62 ns
  • Power Dissipation-Max: 1.2W Ta
  • Rds On (Max) @ Id, Vgs: 25m Ω @ 5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 53.1nC @ 10V
  • Avalanche Energy Rating (Eas): 62.9 mJ

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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