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Inventory:3459
  • Qty Unit Price price
  • 1 $0.584 $0.584
  • 10 $0.578 $5.78
  • 100 $0.572 $57.2
  • 1000 $0.566 $566
  • 10000 $0.56 $5600

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  • Manufacturer No:
    ZXMN6A11GTA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZXMN6A11GTA
  • SKU:
    1755120
  • Description:
    MOSFET 60V N-Chnl UMOS

ZXMN6A11GTA Details

MOSFET 60V N-Chnl UMOS

ZXMN6A11GTA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Pin Count: 4
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 60V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Case Connection: DRAIN
  • Height: 1.65mm
  • JESD-30 Code: R-PDSO-G4
  • Current Rating: 2.4A
  • Package / Case: TO-261-4, TO-261AA
  • Vgs(th) (Max) @ Id: 3V @ 250μA
  • Power Dissipation: 3.9W
  • Rise Time: 3.5 ns
  • Fall Time (Typ): 4.6 ns
  • Turn-Off Delay Time: 8.2 ns
  • Current - Continuous Drain (Id) @ 25°C: 3.1A Ta
  • Turn On Delay Time: 1.95 ns
  • Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 40V
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Number of Channels: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 4
  • Pbfree Code: no
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 60V
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2010
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Subcategory: FET General Purpose Power
  • Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
  • Length: 6.7mm
  • Width: 3.7mm
  • Resistance: 120mOhm
  • Drain Current-Max (Abs) (ID): 3.8A
  • Continuous Drain Current (ID): 4.4A
  • Weight: 7.994566mg
  • Power Dissipation-Max: 2W Ta
  • Additional Feature: LOW THRESHOLD
  • Rds On (Max) @ Id, Vgs: 120m Ω @ 2.5A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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