Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:45000
- Qty Unit Price price
- 1 $0.167 $0.167
- 10 $0.165 $1.65
- 100 $0.163 $16.3
- 1000 $0.161 $161
- 10000 $0.159 $1590
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：ZXM61P02FTA
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：ZXM61P02FTA
- SKU：1761952
- Description：MOSFET 20V P-Chnl HDMOS
User Guide
User Guide
ZXM61P02FTA Details
MOSFET 20V P-Chnl HDMOS
ZXM61P02FTA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Max Junction Temperature (Tj): 150°C
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Operating Temperature: -55°C~150°C TJ
- Width: 1.4mm
- Height: 1.1mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Continuous Drain Current (ID): 900mA
- Power Dissipation: 625mW
- Drain to Source Breakdown Voltage: -20V
- Dual Supply Voltage: -20V
- Weight: 7.994566mg
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Rise Time: 6.7 ns
- Turn On Delay Time: 2.9 ns
- Current Rating: -800mA
- Drive Voltage (Max Rds On,Min Rds On): 2.7V 4.5V
- Current - Continuous Drain (Id) @ 25°C: 900mA Ta
- Nominal Vgs: -700 mV
- Rds On (Max) @ Id, Vgs: 600m Ω @ 610mA, 4.5V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Published: 2006
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 20V
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Subcategory: Other Transistors
- FET Type: P-Channel
- Resistance: 600mOhm
- Voltage - Rated DC: -20V
- Vgs (Max): ±12V
- Length: 3.04mm
- Fall Time (Typ): 6.7 ns
- Drain Current-Max (Abs) (ID): 0.9A
- Additional Feature: LOW THRESHOLD
- Turn-Off Delay Time: 11.2 ns
- Power Dissipation-Max: 625mW Ta
- Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 15V
Search for similar products
ZXM61P02FTA Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & ZXM61P02FTA
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
