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Inventory:12500
  • Qty Unit Price price
  • 1 $0.521 $0.521
  • 10 $0.515 $5.15
  • 100 $0.509 $50.9
  • 1000 $0.503 $503
  • 10000 $0.498 $4980

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  • Manufacturer No:
    ZXMC10A816N8TC
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    ZXMC10A816N8TC
  • SKU:
    1763287
  • Description:
    MOSFET N/P-CH 100V 2A 8-SOIC

ZXMC10A816N8TC Details

MOSFET N/P-CH 100V 2A 8-SOIC

ZXMC10A816N8TC Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 8
  • Terminal Position: DUAL
  • REACH SVHC: No SVHC
  • Drain to Source Voltage (Vdss): 100V
  • Terminal Finish: Matte Tin (Sn)
  • Published: 2005
  • Factory Lead Time: 17 Weeks
  • Continuous Drain Current (ID): 2A
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Turn-Off Delay Time: 20 ns
  • Drain Current-Max (Abs) (ID): 1.7A
  • FET Feature: Logic Level Gate
  • Width: 3.95mm
  • Turn On Delay Time: 4.3 ns
  • Rise Time: 5.2 ns
  • Pulsed Drain Current-Max (IDM): 9.4A
  • Weight: 73.992255mg
  • Input Capacitance (Ciss) (Max) @ Vds: 497pF @ 50V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Number of Pins: 8
  • Pin Count: 8
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Application: SWITCHING
  • Height: 1.5mm
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Fall Time (Typ): 12 ns
  • Length: 4.95mm
  • Max Power Dissipation: 1.8W
  • Power Dissipation: 2.1W
  • FET Type: N and P-Channel
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Vgs(th) (Max) @ Id: 2.4V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 10V
  • Rds On (Max) @ Id, Vgs: 230m Ω @ 1A, 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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