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- Manufacturer No：DMN2014LHAB-7
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：DMN2014LHAB-7
- SKU：1773270
- Description：MOSFET 2N-CH 20V 9A 6-UDFN
User Guide
User Guide
DMN2014LHAB-7 Details
MOSFET 2N-CH 20V 9A 6-UDFN
DMN2014LHAB-7 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- ECCN Code: EAR99
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Time@Peak Reflow Temperature-Max (s): 30
- Number of Pins: 7
- Operating Temperature: -55°C~150°C TJ
- Length: 3.05mm
- Max Power Dissipation: 800mW
- Package / Case: 6-UFDFN Exposed Pad
- FET Feature: Logic Level Gate
- Turn On Delay Time: 6.9 ns
- Vgs(th) (Max) @ Id: 1.1V @ 250μA
- Rise Time: 15.5ns
- Turn-Off Delay Time: 40.9 ns
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- JESD-609 Code: e4
- Published: 2015
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Factory Lead Time: 14 Weeks
- Drain to Source Voltage (Vdss): 20V
- Height: 600μm
- Current - Continuous Drain (Id) @ 25°C: 9A
- Fall Time (Typ): 12 ns
- Width: 2.05mm
- Continuous Drain Current (ID): 9.3A
- FET Type: 2 N-Channel (Dual) Common Drain
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Rds On (Max) @ Id, Vgs: 13m Ω @ 4A, 4.5V
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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