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DMN3190LDW-7123
Inventory:13740
  • Qty Unit Price price
  • 1 $688.246 $688.246
  • 10 $681.431 $6814.31
  • 100 $674.684 $67468.4
  • 1000 $668.003 $668003
  • 10000 $661.389 $6613890

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DMN3190LDW-7
  • Manufacturer No:
    DMN3190LDW-7
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMN3190LDW-7
  • SKU:
    1773852
  • Description:
    MOSFET 2N-CH 30V 1A SOT363

DMN3190LDW-7 Details

MOSFET 2N-CH 30V 1A SOT363

DMN3190LDW-7 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Number of Channels: 2
  • Mount: Surface Mount
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Terminations: 6
  • Pin Count: 6
  • Peak Reflow Temperature (Cel): 260
  • Element Configuration: Dual
  • Continuous Drain Current (ID): 1A
  • Factory Lead Time: 15 Weeks
  • Gate to Source Voltage (Vgs): 20V
  • DS Breakdown Voltage-Min: 30V
  • Transistor Application: SWITCHING
  • Additional Feature: HIGH RELIABILITY
  • Length: 2.2mm
  • Max Power Dissipation: 320mW
  • FET Feature: Logic Level Gate
  • Weight: 6.010099mg
  • Turn On Delay Time: 4.5 ns
  • Drain-source On Resistance-Max: 0.19Ohm
  • Vgs(th) (Max) @ Id: 2.8V @ 250μA
  • Rds On (Max) @ Id, Vgs: 190m Ω @ 1.3A, 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 20V
  • RoHS Status: ROHS3 Compliant
  • Number of Elements: 2
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Published: 2013
  • Number of Pins: 6
  • Terminal Form: GULL WING
  • Terminal Finish: Matte Tin (Sn)
  • Drain Current-Max (Abs) (ID): 1A
  • Transistor Element Material: SILICON
  • Height: 1mm
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Operating Mode: ENHANCEMENT MODE
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Width: 1.35mm
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Reference Standard: AEC-Q101
  • FET Type: 2 N-Channel (Dual)
  • Rise Time: 8.9 ns
  • Fall Time (Typ): 15.6 ns
  • Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
  • Turn-Off Delay Time: 30.3 ns

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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