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- Manufacturer No：IRF620
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF620
- SKU：180174
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 5.2A Tc 52A 50W 13ns
User Guide
User Guide
IRF620 Details
Tube Through Hole N-Channel Single Mosfet Transistor 5.2A Tc 52A 50W 13ns
IRF620 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Part Status: Obsolete
- Number of Pins: 3
- Voltage - Rated DC: 200V
- Drain to Source Voltage (Vdss): 200V
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Power Dissipation: 50W
- FET Type: N-Channel
- Operating Temperature: -65°C~150°C TJ
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Drain to Source Resistance: 800mOhm
- Continuous Drain Current (ID): 5.2A
- Turn-Off Delay Time: 19 ns
- Current: 52A
- Power Dissipation-Max: 50W Tc
- Rds On Max: 800 mΩ
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
- Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Voltage: 200V
- Drain to Source Breakdown Voltage: 200V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Current Rating: 6A
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 13 ns
- Length: 10.41mm
- Weight: 6.000006g
- Turn On Delay Time: 7.2 ns
- Rise Time: 22ns
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance: 260pF
- Current - Continuous Drain (Id) @ 25°C: 5.2A Tc
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