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- Manufacturer No：DMN26D0UFB4-7
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：DMN26D0UFB4-7
- SKU：1803275
- Description：MOSFET N-CH 20V 230MA DFN
User Guide
User Guide
DMN26D0UFB4-7 Details
MOSFET N-CH 20V 230MA DFN
DMN26D0UFB4-7 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Channels: 1
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Element Configuration: Single
- DS Breakdown Voltage-Min: 20V
- Published: 2017
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Height: 350μm
- Width: 650μm
- Subcategory: FET General Purpose Power
- Packaging: Digi-Reel?
- Continuous Drain Current (ID): 240mA
- Turn On Delay Time: 3.8 ns
- Drive Voltage (Max Rds On,Min Rds On): 1.5V 4.5V
- Drain Current-Max (Abs) (ID): 0.24A
- Power Dissipation-Max: 350mW Ta
- Fall Time (Typ): 15.2 ns
- Rds On (Max) @ Id, Vgs: 3 Ω @ 100mA, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 14.1pF @ 15V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- JESD-609 Code: e4
- Number of Pins: 3
- REACH SVHC: No SVHC
- Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
- Gate to Source Voltage (Vgs): 10V
- Factory Lead Time: 18 Weeks
- Drain to Source Voltage (Vdss): 20V
- Terminal Position: BOTTOM
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Resistance: 10Ohm
- Case Connection: DRAIN
- Length: 1.05mm
- Power Dissipation: 350mW
- Vgs (Max): ±10V
- Rise Time: 7.9 ns
- Package / Case: 3-XFDFN
- Vgs(th) (Max) @ Id: 1.1V @ 250μA
- Turn-Off Delay Time: 13.4 ns
- Current - Continuous Drain (Id) @ 25°C: 230mA Ta
- Additional Feature: ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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