Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:12500
- Qty Unit Price price
- 1 $0.237 $0.237
- 10 $0.234 $2.34
- 100 $0.231 $23.1
- 1000 $0.228 $228
- 10000 $0.2249 $2249
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：DMN6040SSD-13
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Arrays
- Datasheet：DMN6040SSD-13
- SKU：1809639
- Description：MOSFET 2N-CH 60V 5A 8SO
User Guide
User Guide
DMN6040SSD-13 Details
MOSFET 2N-CH 60V 5A 8SO
DMN6040SSD-13 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Channels: 2
- Mount: Surface Mount
- Pbfree Code: yes
- Lead Free: Lead Free
- Number of Terminations: 8
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Drain Current-Max (Abs) (ID): 5A
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Package / Case: 8-SOIC (0.154, 3.90mm Width)
- Transistor Application: SWITCHING
- Height: 1.5mm
- FET Technology: METAL-OXIDE SEMICONDUCTOR
- Fall Time (Typ): 4 ns
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Reference Standard: AEC-Q101
- Max Power Dissipation: 1.7W
- Turn On Delay Time: 6.6 ns
- Rise Time: 8.1 ns
- Turn-Off Delay Time: 20.1 ns
- Input Capacitance (Ciss) (Max) @ Vds: 1287pF @ 25V
- RoHS Status: ROHS3 Compliant
- Number of Elements: 2
- Mounting Type: Surface Mount
- ECCN Code: EAR99
- JESD-609 Code: e3
- Number of Pins: 8
- Published: 2013
- REACH SVHC: No SVHC
- Drain to Source Voltage (Vdss): 60V
- Terminal Finish: Matte Tin (Sn)
- Element Configuration: Dual
- Continuous Drain Current (ID): 5A
- Factory Lead Time: 18 Weeks
- Operating Temperature: -55°C~150°C TJ
- Packaging: Cut Tape (CT)
- Operating Mode: ENHANCEMENT MODE
- Additional Feature: HIGH RELIABILITY
- Length: 4.95mm
- Power Dissipation: 1.3W
- FET Feature: Logic Level Gate
- FET Type: 2 N-Channel (Dual)
- Width: 3.95mm
- Drain-source On Resistance-Max: 0.04Ohm
- Weight: 73.992255mg
- Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 10V
- Rds On (Max) @ Id, Vgs: 40m Ω @ 4.5A, 10V
Search for similar products
DMN6040SSD-13 Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & DMN6040SSD-13
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
