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Inventory:27500
  • Qty Unit Price price
  • 1 $0.399 $0.399
  • 10 $0.395 $3.95
  • 100 $0.391 $39.1
  • 1000 $0.387 $387
  • 10000 $0.3823 $3823

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  • Manufacturer No:
    DMHC3025LSD-13
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Arrays
  • Datasheet:
    DMHC3025LSD-13
  • SKU:
    1810953
  • Description:
    MOSFET 2N/2P-CH 30V 8SO

DMHC3025LSD-13 Details

MOSFET 2N/2P-CH 30V 8SO

DMHC3025LSD-13 Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Pbfree Code: yes
  • Lead Free: Lead Free
  • Number of Pins: 8
  • Terminal Position: DUAL
  • Published: 2013
  • REACH SVHC: No SVHC
  • Time@Peak Reflow Temperature-Max (s): 40
  • Transistor Element Material: SILICON
  • Gate to Source Voltage (Vgs): 20V
  • Threshold Voltage: 2V
  • Package / Case: 8-SOIC (0.154, 3.90mm Width)
  • Drain Current-Max (Abs) (ID): 6A
  • Max Power Dissipation: 1.5W
  • Operating Mode: ENHANCEMENT MODE
  • Subcategory: Other Transistors
  • Pulsed Drain Current-Max (IDM): 60A
  • Turn On Delay Time: 7.5 ns
  • Continuous Drain Current (ID): 4.2A
  • Reference Standard: AEC-Q101
  • Vgs(th) (Max) @ Id: 2V @ 250μA
  • Rise Time: 4.9 ns
  • Fall Time (Typ): 13.5 ns
  • Weight: 73.992255mg
  • Gate Charge (Qg) (Max) @ Vgs: 11.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 590pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C: 6A 4.2A
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Contact Plating: Tin
  • Number of Terminations: 8
  • Number of Elements: 4
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Max Junction Temperature (Tj): 150°C
  • Factory Lead Time: 18 Weeks
  • Drain to Source Voltage (Vdss): 30V
  • Operating Temperature: -55°C~150°C TJ
  • Packaging: Cut Tape (CT)
  • Transistor Application: SWITCHING
  • Power Dissipation: 1.5W
  • Additional Feature: HIGH RELIABILITY
  • Height: 1.7mm
  • FET Technology: METAL-OXIDE SEMICONDUCTOR
  • Length: 4.95mm
  • FET Feature: Logic Level Gate
  • Drain to Source Breakdown Voltage: -30V
  • Width: 3.95mm
  • Polarity/Channel Type: N-CHANNEL AND P-CHANNEL
  • Drain-source On Resistance-Max: 0.025Ohm
  • FET Type: 2 N and 2 P-Channel (H-Bridge)
  • Rds On (Max) @ Id, Vgs: 25m Ω @ 5A, 10V
  • Turn-Off Delay Time: 28.2 ns

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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