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- Manufacturer No：DMP2035UVT-7
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：DMP2035UVT-7
- SKU：1816177
- Description：P-Channel 20 V 35 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
User Guide
User Guide
DMP2035UVT-7 Details
P-Channel 20 V 35 mOhm Surface Mount Enhancement Mode Mosfet - TSOT26-6
DMP2035UVT-7 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Terminations: 6
- Pin Count: 6
- REACH SVHC: No SVHC
- Peak Reflow Temperature (Cel): 260
- Gate to Source Voltage (Vgs): 12V
- Width: 1.6mm
- Element Configuration: Single
- Power Dissipation: 2W
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 6A
- Transistor Application: SWITCHING
- Additional Feature: HIGH RELIABILITY
- Subcategory: Other Transistors
- Pulsed Drain Current-Max (IDM): 24A
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Drain Current-Max (Abs) (ID): 5.2A
- Vgs (Max): ±12V
- Drive Voltage (Max Rds On,Min Rds On): 1.8V 4.5V
- Fall Time (Typ): 42 ns
- Turn-Off Delay Time: 94 ns
- Rds On (Max) @ Id, Vgs: 35m Ω @ 4A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 2400pF @ 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Terminal Position: DUAL
- Number of Pins: 6
- Terminal Form: GULL WING
- Published: 2012
- Terminal Finish: Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Factory Lead Time: 15 Weeks
- Drain to Source Voltage (Vdss): 20V
- Length: 2.9mm
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Height: 900μm
- FET Type: P-Channel
- Rise Time: 12 ns
- Drain to Source Breakdown Voltage: -20V
- Turn On Delay Time: 17 ns
- Resistance: 35mOhm
- Vgs(th) (Max) @ Id: 1.5V @ 250μA
- Current - Continuous Drain (Id) @ 25°C: 6A Ta
- Power Dissipation-Max: 1.2W Ta
- Gate Charge (Qg) (Max) @ Vgs: 23.1nC @ 4.5V
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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