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Inventory:92000
  • Qty Unit Price price
  • 1 $0.304 $0.304
  • 10 $0.3 $3
  • 100 $0.297 $29.7
  • 1000 $0.294 $294
  • 10000 $0.291 $2910

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  • Manufacturer No:
    ZXTN25100DGTA
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - Bipolar (BJT) - Single
  • Datasheet:
    ZXTN25100DGTA
  • SKU:
    1824189
  • Description:
    Trans GP BJT NPN 100V 3A 4-Pin(3+Tab) SOT-223 T/R

ZXTN25100DGTA Details

Trans GP BJT NPN 100V 3A 4-Pin(3+Tab) SOT-223 T/R

ZXTN25100DGTA Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mount: Surface Mount
  • Number of Elements: 1
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 4
  • Pin Count: 4
  • Pbfree Code: no
  • REACH SVHC: No SVHC
  • Collector Emitter Voltage (VCEO): 100V
  • Terminal Finish: Matte Tin (Sn)
  • Max Junction Temperature (Tj): 150°C
  • Transistor Element Material: SILICON
  • Factory Lead Time: 15 Weeks
  • Operating Temperature: -55°C~150°C TJ
  • Transistor Type: NPN
  • Emitter Base Voltage (VEBO): 7V
  • Subcategory: Other Transistors
  • Case Connection: COLLECTOR
  • Length: 6.7mm
  • hFE Min: 300
  • Collector Emitter Breakdown Voltage: 130V
  • Frequency: 175MHz
  • Transition Frequency: 175MHz
  • Current - Collector Cutoff (Max): 50nA ICBO
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA 2V
  • Base Part Number: ZXTN25100D
  • RoHS Status: ROHS3 Compliant
  • Mounting Type: Surface Mount
  • Packaging: Tape & Reel (TR)
  • ECCN Code: EAR99
  • JESD-609 Code: e3
  • Terminal Position: DUAL
  • Number of Terminations: 4
  • Max Collector Current: 3A
  • Terminal Form: GULL WING
  • Peak Reflow Temperature (Cel): 260
  • Max Breakdown Voltage: 100V
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2007
  • Element Configuration: Single
  • Power - Max: 3W
  • Transistor Application: SWITCHING
  • Polarity/Channel Type: NPN
  • Height: 1.8mm
  • Collector Base Voltage (VCBO): 180V
  • Power Dissipation: 1.2W
  • Width: 3.7mm
  • Collector Emitter Saturation Voltage: 200mV
  • Package / Case: TO-261-4, TO-261AA
  • Gain Bandwidth Product: 175MHz
  • Weight: 7.994566mg
  • Max Power Dissipation: 5.3W
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 600mA, 3A

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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