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- Manufacturer No：IRFD210
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD210
- SKU：182425
- Description：MOSFET N-CH 200V 600MA 4-DIP
User Guide
User Guide
IRFD210 Details
MOSFET N-CH 200V 600MA 4-DIP
IRFD210 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Voltage - Rated DC: 200V
- Drain to Source Breakdown Voltage: 200V
- Max Operating Temperature: 150°C
- Length: 5mm
- Published: 2017
- FET Type: N-Channel
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 600mA
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 17 ns
- Power Dissipation-Max: 1W Ta
- Rds On Max: 1.5 Ω
- Input Capacitance: 140pF
- Height: 3.37mm
- Width: 6.29mm
- Current - Continuous Drain (Id) @ 25°C: 600mA Ta
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Lead Free: Contains Lead
- Drain to Source Voltage (Vdss): 200V
- Power Dissipation: 1W
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Current Rating: 600mA
- Drain to Source Resistance: 1.5Ohm
- Turn-Off Delay Time: 14 ns
- Package / Case: 4-DIP (0.300, 7.62mm)
- Rise Time: 17ns
- Turn On Delay Time: 8.2 ns
- Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
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