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- Manufacturer No：IRFPC50APBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPC50APBF
- SKU：182453
- Description：MOSFET N-CH 600V 11A TO-247AC
User Guide
User Guide
IRFPC50APBF Details
MOSFET N-CH 600V 11A TO-247AC
IRFPC50APBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- REACH SVHC: Unknown
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 600V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Turn On Delay Time: 15 ns
- Current Rating: 11A
- Vgs (Max): ±30V
- Supplier Device Package: TO-247-3
- Rise Time: 40ns
- Width: 5.31mm
- Nominal Vgs: 4 V
- Fall Time (Typ): 29 ns
- Resistance: 580mOhm
- Current - Continuous Drain (Id) @ 25°C: 11A Tc
- Power Dissipation-Max: 180W Tc
- Input Capacitance: 2.1nF
- Rds On (Max) @ Id, Vgs: 580mOhm @ 6A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Max Operating Temperature: 150°C
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 600V
- Drain to Source Breakdown Voltage: 600V
- Published: 2004
- FET Type: N-Channel
- Threshold Voltage: 4V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Continuous Drain Current (ID): 11A
- Package / Case: TO-247-3
- Length: 15.87mm
- Turn-Off Delay Time: 33 ns
- Power Dissipation: 180W
- Height: 20.7mm
- Weight: 38.000013g
- Drain to Source Resistance: 580mOhm
- Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 25V
- Rds On Max: 580 mΩ
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