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Inventory:1356
  • Qty Unit Price price
  • 1 $1105.124 $1105.124
  • 10 $1094.182 $10941.82
  • 100 $1083.348 $108334.8
  • 1000 $1072.621 $1072621
  • 10000 $1062 $10620000

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  • Manufacturer No:
    ZVN4206A
  • Manufacturer:
    Diodes Incorporated
  • Category:
    Transistors - FETs, MOSFETs - Single
  • Datasheet:
    ZVN4206A
  • SKU:
    1828335
  • Description:
    MOSFET N-CH 60V 600MA TO92-3

ZVN4206A Details

MOSFET N-CH 60V 600MA TO92-3

ZVN4206A Specification Parameters

  • Part Status: Active
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Mounting Type: Through Hole
  • Number of Elements: 1
  • ECCN Code: EAR99
  • Radiation Hardening: No
  • Lead Free: Lead Free
  • Number of Pins: 3
  • REACH SVHC: No SVHC
  • Voltage - Rated DC: 60V
  • Terminal Form: WIRE
  • Time@Peak Reflow Temperature-Max (s): 40
  • Published: 2006
  • Element Configuration: Single
  • Gate to Source Voltage (Vgs): 20V
  • Operating Temperature: -55°C~150°C TJ
  • Technology: MOSFET (Metal Oxide)
  • Operating Mode: ENHANCEMENT MODE
  • Current Rating: 600mA
  • Width: 2.41mm
  • Drain Current-Max (Abs) (ID): 0.6A
  • Turn-Off Delay Time: 12 ns
  • Weight: 453.59237mg
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Subcategory: FET General Purpose Powers
  • Drive Voltage (Max Rds On,Min Rds On): 5V 10V
  • Length: 4.77mm
  • Feedback Cap-Max (Crss): 20 pF
  • Current - Continuous Drain (Id) @ 25°C: 600mA Ta
  • RoHS Status: ROHS3 Compliant
  • Packaging: Bulk
  • Mount: Through Hole
  • Number of Channels: 1
  • Pbfree Code: yes
  • JESD-609 Code: e3
  • Number of Terminations: 3
  • Pin Count: 3
  • Peak Reflow Temperature (Cel): 260
  • Drain to Source Breakdown Voltage: 60V
  • Terminal Finish: Matte Tin (Sn)
  • Threshold Voltage: 3V
  • Transistor Element Material: SILICON
  • Factory Lead Time: 17 Weeks
  • Terminal Position: BOTTOM
  • FET Type: N-Channel
  • Transistor Application: SWITCHING
  • Vgs (Max): ±20V
  • Continuous Drain Current (ID): 600mA
  • Resistance: 1Ohm
  • Fall Time (Typ): 12 ns
  • Rise Time: 12 ns
  • Turn On Delay Time: 8 ns
  • Power Dissipation: 700mW
  • Height: 4.01mm
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Power Dissipation-Max: 700mW Ta
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
  • Rds On (Max) @ Id, Vgs: 1 Ω @ 1.5A, 10V

Diodes Incorporated — Manufacturer Introduction

Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.

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