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- Manufacturer No：ZXMN6A07FTA
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：ZXMN6A07FTA
- SKU：1830063
- Description：ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
User Guide
User Guide
ZXMN6A07FTA Details
ZXMN6A07F Series 60 V 0.25 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
ZXMN6A07FTA Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- REACH SVHC: No SVHC
- Voltage - Rated DC: 60V
- Dual Supply Voltage: 60V
- Threshold Voltage: 3V
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Factory Lead Time: 19 Weeks
- FET Type: N-Channel
- Width: 1.4mm
- Height: 1.1mm
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Current Rating: 1.2A
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Weight: 7.994566mg
- Subcategory: FET General Purpose Powers
- Turn On Delay Time: 1.8 ns
- Rise Time: 1.4 ns
- Current - Continuous Drain (Id) @ 25°C: 1.2A Ta
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 10V
- Rds On (Max) @ Id, Vgs: 250m Ω @ 1.8A, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Termination: SMD/SMT
- Peak Reflow Temperature (Cel): 260
- Drain to Source Breakdown Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Max Junction Temperature (Tj): 150°C
- Element Configuration: Single
- Published: 2002
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 1.2A
- Resistance: 400mOhm
- Nominal Vgs: 3 V
- Length: 3.04mm
- Turn-Off Delay Time: 4.9 ns
- Fall Time (Typ): 1.4 ns
- Power Dissipation-Max: 625mW Ta
- Power Dissipation: 806mW
- Input Capacitance (Ciss) (Max) @ Vds: 166pF @ 40V
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Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
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