Add to like
Add to project list
- Home >
- Manufacturer No：
- Manufacturer：
- Category：
- Datasheet：
- SKU：
- Description：
- Quantity：
- RFQ
Add To Cart
- Material flow:
- Payment:
Inventory:0
- Qty Unit Price price
Not the price you want? Send RFQ Now and we'll contact you ASAP
- Manufacturer No：ZXMN6A08KTC
- Manufacturer：Diodes Incorporated
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：ZXMN6A08KTC
- SKU：1852520
- Description：MOSFET N-CH 60V 5.36A DPAK
User Guide
User Guide
ZXMN6A08KTC Details
MOSFET N-CH 60V 5.36A DPAK
ZXMN6A08KTC Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mounting Type: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- JESD-609 Code: e3
- Pin Count: 4
- Pbfree Code: no
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 40
- Transistor Element Material: SILICON
- Factory Lead Time: 17 Weeks
- Height: 2.39mm
- Packaging: Cut Tape (CT)
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- JESD-30 Code: R-PSSO-G2
- Subcategory: FET General Purpose Power
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Width: 6.22mm
- JEDEC-95 Code: TO-252AA
- Turn On Delay Time: 2.6 ns
- Rise Time: 2.1 ns
- Turn-Off Delay Time: 12.3 ns
- Input Capacitance (Ciss) (Max) @ Vds: 459pF @ 40V
- Power Dissipation-Max: 2.12W Ta
- RoHS Status: ROHS3 Compliant
- Number of Terminations: 2
- Mount: Surface Mount
- Number of Channels: 1
- Radiation Hardening: No
- Lead Free: Lead Free
- Number of Pins: 3
- Terminal Form: GULL WING
- Peak Reflow Temperature (Cel): 260
- Terminal Finish: Matte Tin (Sn)
- Published: 2006
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Length: 6.73mm
- Drive Voltage (Max Rds On,Min Rds On): 4.5V 10V
- Vgs(th) (Max) @ Id: 3V @ 250μA
- Fall Time (Typ): 4.6 ns
- Continuous Drain Current (ID): 7.9A
- Drain-source On Resistance-Max: 0.08Ohm
- Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
- Rds On (Max) @ Id, Vgs: 80m Ω @ 4.8A, 10V
Search for similar products
ZXMN6A08KTC Similar Products
The four parts on the right have similar specifications to Diodes Incorporated & ZXMN6A08KTC
Diodes Incorporated — Manufacturer Introduction
Diodes Incorporated delivers high-quality semiconductor products to the world’s leading companies in the consumer electronics, computing, communications, industrial, and automotive markets. They leverage their expanded product portfolio of discrete, analog, and mixed-signal products and leading-edge packaging technology to meet customers’ needs. Their broad range of application-specific solutions and solutions-focused sales, coupled with worldwide operations of 25 sites, including engineering, testing, manufacturing, and customer service, enables us to be a premier provider for high-volume, high-growth markets.
Hot Search
Excellent
Based on reviews
Excellent
Based on reviews
LKR uses cookies to help deliver a better online experience. You can see what cookies we server and how to set your preferences in our
Cookies Policy, if you agree on our use of cookies please click continue. When browsing and using our website, LKR also collects, stores and/or processes personal data,
please read our Term & Condition
and
Privacy Policy
to find out more.
About Us
Our social media
We support logistics
We Accept Payment Via
