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- Manufacturer No：IRFD220
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD220
- SKU：185444
- Description：MOSFET N-CH 200V 800MA 4-DIP
User Guide
User Guide
IRFD220 Details
MOSFET N-CH 200V 800MA 4-DIP
IRFD220 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Number of Pins: 4
- Packaging: Tube
- Lead Free: Contains Lead
- Voltage - Rated DC: 200V
- Reach Compliance Code: unknown
- Power Dissipation: 1W
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Length: 5mm
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 800mA
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Drain Current-Max (Abs) (ID): 0.8A
- Package / Case: 4-DIP (0.300, 7.62mm)
- Power Dissipation-Max: 1W Ta
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Width: 6.29mm
- Current - Continuous Drain (Id) @ 25°C: 800mA Ta
- Mounting Type: Through Hole
- Number of Channels: 1
- Part Status: Obsolete
- Pin Count: 4
- Pbfree Code: no
- JESD-609 Code: e0
- Drain to Source Breakdown Voltage: 200V
- Published: 2015
- Terminal Finish: Tin/Lead (Sn/Pb)
- Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- FET Type: N-Channel
- Operating Mode: ENHANCEMENT MODE
- Current Rating: 800mA
- Subcategory: FET General Purpose Power
- Fall Time (Typ): 22 ns
- Turn-Off Delay Time: 19 ns
- Turn On Delay Time: 7.2 ns
- Rise Time: 22ns
- Height: 3.37mm
- Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
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