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- Manufacturer No：IRF840A
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF840A
- SKU：185697
- Description：MOSFET N-CH 500V 8A TO-220AB
User Guide
User Guide
IRF840A Details
MOSFET N-CH 500V 8A TO-220AB
IRF840A Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Operating Temperature: -55°C~150°C TJ
- Continuous Drain Current (ID): 8A
- Technology: MOSFET (Metal Oxide)
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Turn On Delay Time: 11 ns
- Power Dissipation: 125W
- Turn-Off Delay Time: 26 ns
- Drain to Source Resistance: 850mOhm
- Current - Continuous Drain (Id) @ 25°C: 8A Tc
- Rise Time: 23ns
- Rds On Max: 850 mΩ
- Input Capacitance: 1.018nF
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 30V
- Current Rating: 8A
- FET Type: N-Channel
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs (Max): ±30V
- Length: 10.41mm
- Fall Time (Typ): 19 ns
- Weight: 6.000006g
- Power Dissipation-Max: 125W Tc
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Height: 9.01mm
- Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1018pF @ 25V
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