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- Manufacturer No：IRFD9024PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD9024PBF
- SKU：186527
- Description：Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
User Guide
User Guide
IRFD9024PBF Details
Trans MOSFET P-CH 60V 1.6A 4-Pin HVMDIP
IRFD9024PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Factory Lead Time: 8 Weeks
- REACH SVHC: No SVHC
- Drain to Source Breakdown Voltage: 60V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~175°C TJ
- Turn-Off Delay Time: 15 ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Power Dissipation: 1.3W
- Resistance: 280mOhm
- Voltage - Rated DC: -60V
- Threshold Voltage: -4V
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
- Height: 3.37mm
- Rise Time: 68ns
- Width: 6.29mm
- Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 25V
- Current Rating: -1.6A
- Rds On (Max) @ Id, Vgs: 280mOhm @ 960mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Lead Free: Lead Free
- Number of Pins: 4
- Packaging: Tube
- Drain to Source Voltage (Vdss): 60V
- Published: 2011
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Length: 5mm
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- FET Type: P-Channel
- Recovery Time: 200 ns
- Turn On Delay Time: 13 ns
- Drain to Source Resistance: 280mOhm
- Package / Case: 4-DIP (0.300, 7.62mm)
- Fall Time (Typ): 68 ns
- Power Dissipation-Max: 1.3W Ta
- Rds On Max: 280 mΩ
- Current - Continuous Drain (Id) @ 25°C: 1.6A Ta
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Input Capacitance: 570pF
- Continuous Drain Current (ID): -1.6A
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