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- Manufacturer No：IRFD110
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD110
- SKU：186566
- Description：MOSFET N-CH 100V 1A 4-DIP
User Guide
User Guide
IRFD110 Details
MOSFET N-CH 100V 1A 4-DIP
IRFD110 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Number of Pins: 4
- Lead Free: Contains Lead
- Voltage - Rated DC: 100V
- Drain to Source Breakdown Voltage: 100V
- Max Operating Temperature: 175°C
- Continuous Drain Current (ID): 1A
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Vgs (Max): ±20V
- Turn-Off Delay Time: 15 ns
- Power Dissipation: 1.3W
- Package / Case: 4-DIP (0.300, 7.62mm)
- Rise Time: 16ns
- Resistance: 540mOhm
- Current - Continuous Drain (Id) @ 25°C: 1A Ta
- Supplier Device Package: 4-DIP, Hexdip, HVMDIP
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
- Mounting Type: Through Hole
- Number of Elements: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Packaging: Tube
- Contact Plating: Lead, Tin
- Drain to Source Voltage (Vdss): 100V
- Published: 2015
- Current Rating: 1A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- FET Type: N-Channel
- Operating Temperature: -55°C~175°C TJ
- Input Capacitance: 180pF
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 16 ns
- Turn On Delay Time: 6.9 ns
- Drain to Source Resistance: 540mOhm
- Power Dissipation-Max: 1.3W Ta
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Rds On Max: 540 mΩ
- Rds On (Max) @ Id, Vgs: 540mOhm @ 600mA, 10V
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