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- Manufacturer No：IRFI510G
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFI510G
- SKU：187053
- Description：MOSFET N-CH 100V 4.5A TO220FP
User Guide
User Guide
IRFI510G Details
MOSFET N-CH 100V 4.5A TO220FP
IRFI510G Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Drain to Source Breakdown Voltage: 100V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Operating Temperature: -55°C~175°C TJ
- Supplier Device Package: TO-220-3
- Input Capacitance: 180pF
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: TO-220-3 Full Pack, Isolated Tab
- Turn On Delay Time: 6.9 ns
- Drain to Source Resistance: 540mOhm
- Current - Continuous Drain (Id) @ 25°C: 4.5A Tc
- Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
- Rds On Max: 540 mΩ
- Rds On (Max) @ Id, Vgs: 540mOhm @ 2.7A, 10V
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 100V
- Max Operating Temperature: 175°C
- Element Configuration: Single
- FET Type: N-Channel
- Width: 4.83mm
- Vgs (Max): ±20V
- Continuous Drain Current (ID): 4.5A
- Turn-Off Delay Time: 15 ns
- Height: 9.8mm
- Weight: 6.000006g
- Rise Time: 16ns
- Length: 10.63mm
- Fall Time (Typ): 9.4 ns
- Power Dissipation-Max: 27W Tc
- Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
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