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- Manufacturer No：IRF9610PBF
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF9610PBF
- SKU：190278
- Description：MOSFET P-CH 200V 1.8A TO-220AB
User Guide
User Guide
IRF9610PBF Details
MOSFET P-CH 200V 1.8A TO-220AB
IRF9610PBF Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- Lead Free: Lead Free
- Factory Lead Time: 8 Weeks
- Number of Pins: 3
- Drain to Source Voltage (Vdss): 200V
- Published: 2008
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Technology: MOSFET (Metal Oxide)
- Power Dissipation: 20W
- Width: 4.7mm
- Turn-Off Delay Time: 10 ns
- Drain to Source Resistance: 3Ohm
- FET Type: P-Channel
- Turn On Delay Time: 8 ns
- Length: 10.41mm
- Rds On Max: 3 Ω
- Threshold Voltage: -4V
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Voltage - Rated DC: -200V
- Input Capacitance: 170pF
- Current - Continuous Drain (Id) @ 25°C: 1.8A Tc
- Current Rating: -1.8A
- Rds On (Max) @ Id, Vgs: 3Ohm @ 900mA, 10V
- RoHS Status: ROHS3 Compliant
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Voltage: 200V
- Max Operating Temperature: 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Operating Temperature: -55°C~150°C TJ
- Vgs (Max): ±20V
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Resistance: 3Ohm
- Rise Time: 15ns
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 8 ns
- Weight: 6.000006g
- Recovery Time: 360 ns
- Height: 9.01mm
- Drain to Source Breakdown Voltage: -200V
- Power Dissipation-Max: 20W Tc
- Nominal Vgs: -4 V
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Continuous Drain Current (ID): -1.8A
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