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- Manufacturer No：IRF710
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF710
- SKU：190769
- Description：MOSFET N-CH 400V 2A TO-220AB
User Guide
User Guide
IRF710 Details
MOSFET N-CH 400V 2A TO-220AB
IRF710 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2016
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Voltage - Rated DC: 400V
- Drain to Source Breakdown Voltage: 400V
- Continuous Drain Current (ID): 2A
- FET Type: N-Channel
- Vgs (Max): ±20V
- Width: 4.7mm
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 11 ns
- Turn-Off Delay Time: 21 ns
- Weight: 6.000006g
- Height: 9.01mm
- Input Capacitance: 170pF
- Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
- Rds On Max: 3.6 Ω
- Mounting Type: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Drain to Source Voltage (Vdss): 400V
- Current Rating: 2A
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Turn On Delay Time: 8 ns
- Length: 10.41mm
- Drain to Source Resistance: 3.6Ohm
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2A Tc
- Power Dissipation-Max: 36W Tc
- Rise Time: 9.9ns
- Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
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