IRFIB7N50APBFVishay Siliconix
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    • Manufacturer No：
      IRFIB7N50APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      190956
    • Description：
      MOSFET N-CH 500V 6.6A TO220FP
    • Quantity：
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    Inventory:759
    • Qty Unit Price price
    • 1 $504.695 $504.695
    • 10 $499.698 $4996.98
    • 100 $494.75 $49475
    • 1000 $489.851 $489851
    • 10000 $485 $4850000

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    • Manufacturer No：
      IRFIB7N50APBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFIB7N50APBF
    • SKU：
      190956
    • Description：
      MOSFET N-CH 500V 6.6A TO220FP

    User Guide

    User Guide

    IRFIB7N50APBF Details

    MOSFET N-CH 500V 6.6A TO220FP

    IRFIB7N50APBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Published: 2008
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Voltage - Rated DC: 500V
    • Drain to Source Breakdown Voltage: 500V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Threshold Voltage: 4V
    • Power Dissipation: 60W
    • Vgs (Max): ±30V
    • Height: 9.8mm
    • Fall Time (Typ): 28 ns
    • Turn-Off Delay Time: 32 ns
    • Current Rating: 6.6A
    • Resistance: 520mOhm
    • Power Dissipation-Max: 60W Tc
    • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
    • Rds On Max: 520 mΩ
    • Input Capacitance: 1.423nF
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Packaging: Tube
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Drain to Source Voltage (Vdss): 500V
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Width: 4.83mm
    • Supplier Device Package: TO-220-3
    • Vgs(th) (Max) @ Id: 4V @ 250μA
    • Rise Time: 35ns
    • Turn On Delay Time: 14 ns
    • Package / Case: TO-220-3 Full Pack, Isolated Tab
    • Weight: 6.000006g
    • Continuous Drain Current (ID): 6.6A
    • Drain to Source Resistance: 520mOhm
    • Length: 10.63mm
    • Current - Continuous Drain (Id) @ 25°C: 6.6A Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 1423pF @ 25V
    • Rds On (Max) @ Id, Vgs: 520mOhm @ 4A, 10V
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