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- Manufacturer No：IRF820
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF820
- SKU：191632
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 2.5A Tc 2.5A 50W 16ns
User Guide
User Guide
IRF820 Details
Tube Through Hole N-Channel Single Mosfet Transistor 2.5A Tc 2.5A 50W 16ns
IRF820 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Power Dissipation: 50W
- FET Type: N-Channel
- Current Rating: 2.5A
- Vgs (Max): ±20V
- Width: 4.7mm
- Drain to Source Resistance: 3Ohm
- Turn On Delay Time: 8 ns
- Length: 10.41mm
- Turn-Off Delay Time: 33 ns
- Power Dissipation-Max: 50W Tc
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Current - Continuous Drain (Id) @ 25°C: 2.5A Tc
- Rise Time: 8.6ns
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Published: 2013
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Continuous Drain Current (ID): 2.5A
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Fall Time (Typ): 16 ns
- Input Capacitance: 360pF
- Weight: 6.000006g
- Rds On Max: 3 Ω
- Height: 9.01mm
- Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
- Rds On (Max) @ Id, Vgs: 3Ohm @ 1.5A, 10V
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