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- Manufacturer No：IRFPG50
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：
Get the PDF file - SKU：193762
- Description：MOSFET N-CH 1000V 6.1A TO-247AC
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- 10 $5.328 $53.28
- 100 $5.275 $527.5
- 1000 $5.222 $5222
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- Manufacturer No：IRFPG50
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFPG50
- SKU：193762
- Description：MOSFET N-CH 1000V 6.1A TO-247AC
User Guide
User Guide
IRFPG50 Details
MOSFET N-CH 1000V 6.1A TO-247AC
IRFPG50 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Part Status: Obsolete
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Element Configuration: Single
- Published: 2017
- Voltage - Rated DC: 1kV
- FET Type: N-Channel
- Vgs (Max): ±20V
- Drain to Source Resistance: 2Ohm
- Package / Case: TO-247-3
- Rise Time: 35ns
- Turn On Delay Time: 19 ns
- Fall Time (Typ): 36 ns
- Continuous Drain Current (ID): 6.1A
- Turn-Off Delay Time: 130 ns
- Weight: 38.000013g
- Power Dissipation-Max: 190W Tc
- Input Capacitance: 2.8nF
- Current - Continuous Drain (Id) @ 25°C: 6.1A Tc
- Mounting Type: Through Hole
- Number of Elements: 1
- Radiation Hardening: No
- Min Operating Temperature: -55°C
- Packaging: Tube
- Lead Free: Contains Lead
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- Drain to Source Breakdown Voltage: 1kV
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Supplier Device Package: TO-247-3
- Length: 15.87mm
- Width: 5.31mm
- Current Rating: 6.1A
- Height: 20.7mm
- Rds On Max: 2 Ω
- Power Dissipation: 190W
- Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 3.6A, 10V
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