IRFB17N50LPBFVishay Siliconix
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    IRFB17N50LPBF123
    • Manufacturer No：
      IRFB17N50LPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
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    • SKU：
      193802
    • Description：
      Tube Through Hole N-Channel Single Mosfet Transistor 16A Tc 16A 220W 28ns
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    Inventory:1357
    • Qty Unit Price price
    • 1 $8400.799 $8400.799
    • 10 $8317.622 $83176.22
    • 100 $8235.269 $823526.9
    • 1000 $8153.731 $8153731
    • 10000 $8073 $80730000

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    IRFB17N50LPBF
    • Manufacturer No：
      IRFB17N50LPBF
    • Manufacturer：
      Vishay Siliconix
    • Category：
      Transistors - FETs, MOSFETs - Single
    • Datasheet：
      IRFB17N50LPBF
    • SKU：
      193802
    • Description：
      Tube Through Hole N-Channel Single Mosfet Transistor 16A Tc 16A 220W 28ns

    User Guide

    User Guide

    IRFB17N50LPBF Details

    Tube Through Hole N-Channel Single Mosfet Transistor 16A Tc 16A 220W 28ns

    IRFB17N50LPBF Specification Parameters

    • Part Status: Active
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • Mount: Through Hole
    • Number of Channels: 1
    • Lead Free: Lead Free
    • Threshold Voltage: 5V
    • Packaging: Tube
    • Max Operating Temperature: 150°C
    • REACH SVHC: Unknown
    • Element Configuration: Single
    • Gate to Source Voltage (Vgs): 30V
    • FET Type: N-Channel
    • Continuous Drain Current (ID): 16A
    • Width: 4.7mm
    • Turn-Off Delay Time: 50 ns
    • Recovery Time: 250 ns
    • Length: 10.41mm
    • Turn On Delay Time: 21 ns
    • Weight: 6.000006g
    • Nominal Vgs: 5 V
    • Current - Continuous Drain (Id) @ 25°C: 16A Tc
    • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
    • Rds On Max: 320 mΩ
    • Input Capacitance: 2.76nF
    • Rds On (Max) @ Id, Vgs: 320mOhm @ 9.9A, 10V
    • RoHS Status: ROHS3 Compliant
    • Mounting Type: Through Hole
    • Number of Elements: 1
    • Radiation Hardening: No
    • Min Operating Temperature: -55°C
    • Factory Lead Time: 8 Weeks
    • Number of Pins: 3
    • Published: 2014
    • Drive Voltage (Max Rds On,Min Rds On): 10V
    • Drain to Source Voltage (Vdss): 500V
    • Operating Temperature: -55°C~150°C TJ
    • Technology: MOSFET (Metal Oxide)
    • Package / Case: TO-220-3
    • Supplier Device Package: TO-220AB
    • Vgs (Max): ±30V
    • Vgs(th) (Max) @ Id: 5V @ 250μA
    • Fall Time (Typ): 28 ns
    • Resistance: 280mOhm
    • Drain to Source Resistance: 320mOhm
    • Power Dissipation: 220W
    • Height: 9.01mm
    • Rise Time: 51ns
    • Power Dissipation-Max: 220W Tc
    • Input Capacitance (Ciss) (Max) @ Vds: 2760pF @ 25V
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