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- Manufacturer No：IRF830A
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRF830A
- SKU：197746
- Description：MOSFET N-CH 500V 5A TO-220AB
User Guide
User Guide
IRF830A Details
MOSFET N-CH 500V 5A TO-220AB
IRF830A Specification Parameters
- Part Status: Active
- Mounting Type: Through Hole
- Number of Channels: 1
- Min Operating Temperature: -55°C
- Number of Pins: 3
- Max Operating Temperature: 150°C
- Continuous Drain Current (ID): 5A
- Element Configuration: Single
- Drain to Source Voltage (Vdss): 500V
- Gate to Source Voltage (Vgs): 30V
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Width: 4.7mm
- Turn On Delay Time: 10 ns
- Vgs (Max): ±30V
- Length: 10.41mm
- Factory Lead Time: 49 Weeks
- Weight: 6.000006g
- Current - Continuous Drain (Id) @ 25°C: 5A Tc
- Height: 9.01mm
- Power Dissipation: 74W
- Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Through Hole
- RoHS Status: Non-RoHS Compliant
- Packaging: Tube
- Lead Free: Contains Lead
- Current Rating: 5A
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Voltage - Rated DC: 500V
- Drain to Source Breakdown Voltage: 500V
- Published: 2003
- FET Type: N-Channel
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
- Fall Time (Typ): 15 ns
- Drain to Source Resistance: 1.4Ohm
- Input Capacitance: 620pF
- Turn-Off Delay Time: 21 ns
- Vgs(th) (Max) @ Id: 4.5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Rise Time: 21ns
- Power Dissipation-Max: 74W Tc
- Rds On Max: 1.4 Ω
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