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- Manufacturer No：IRFD113
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：IRFD113
- SKU：198484
- Description：Tube Through Hole N-Channel Single Mosfet Transistor 800mA Tc 800mA 1W Tc 60V
User Guide
User Guide
IRFD113 Details
Tube Through Hole N-Channel Single Mosfet Transistor 800mA Tc 800mA 1W Tc 60V
IRFD113 Specification Parameters
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Pin Count: 2
- Mount: Through Hole
- Number of Channels: 1
- RoHS Status: Non-RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Terminal Position: DUAL
- Packaging: Tube
- Drain to Source Voltage (Vdss): 60V
- Reach Compliance Code: unknown
- Transistor Element Material: SILICON
- Operating Temperature: -55°C~150°C TJ
- Technology: MOSFET (Metal Oxide)
- Operating Mode: ENHANCEMENT MODE
- Continuous Drain Current (ID): 800mA
- Subcategory: FET General Purpose Power
- Drain Current-Max (Abs) (ID): 0.8A
- Drain-source On Resistance-Max: 0.8Ohm
- Feedback Cap-Max (Crss): 25 pF
- Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
- JESD-30 Code: R-PDIP-T2
- Number of Terminations: 2
- Mounting Type: Through Hole
- Number of Elements: 1
- ECCN Code: EAR99
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Pins: 4
- Published: 2016
- DS Breakdown Voltage-Min: 60V
- Drive Voltage (Max Rds On,Min Rds On): 10V
- Element Configuration: Single
- FET Type: N-Channel
- Transistor Application: SWITCHING
- Vgs (Max): ±20V
- Case Connection: DRAIN
- Vgs(th) (Max) @ Id: 4V @ 250μA
- Package / Case: 4-DIP (0.300, 7.62mm)
- Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
- Power Dissipation-Max: 1W Tc
- Current - Continuous Drain (Id) @ 25°C: 800mA Tc
- Rds On (Max) @ Id, Vgs: 800m Ω @ 800mA, 10V
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