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- Manufacturer No：2N7002-T1-E3
- Manufacturer：Vishay Siliconix
- Category：Transistors - FETs, MOSFETs - Single
- Datasheet：2N7002-T1-E3
- SKU：198835
- Description：VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
User Guide
User Guide
2N7002-T1-E3 Details
VISHAY - 2N7002-T1-E3 - MOSFET Transistor, N Channel, 115 mA, 60 V, 7.5 ohm, 10 V, 2.1 V
2N7002-T1-E3 Specification Parameters
- Part Status: Active
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Mount: Surface Mount
- Number of Elements: 1
- ECCN Code: EAR99
- Radiation Hardening: No
- Lead Free: Lead Free
- Terminal Position: DUAL
- Number of Pins: 3
- Terminal Form: GULL WING
- Drain to Source Breakdown Voltage: 60V
- Time@Peak Reflow Temperature-Max (s): 30
- Published: 2009
- Transistor Element Material: SILICON
- Gate to Source Voltage (Vgs): 20V
- Operating Temperature: -55°C~150°C TJ
- FET Type: N-Channel
- Width: 1.4mm
- Operating Mode: ENHANCEMENT MODE
- Vgs (Max): ±20V
- Turn On Delay Time: 7 ns
- Resistance: 7.5Ohm
- Height: 1.12mm
- Length: 3.04mm
- Drive Voltage (Max Rds On,Min Rds On): 5V 10V
- Feedback Cap-Max (Crss): 5 pF
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
- Nominal Vgs: 2.1 V
- Current - Continuous Drain (Id) @ 25°C: 115mA Ta
- RoHS Status: ROHS3 Compliant
- Mounting Type: Surface Mount
- Packaging: Tape & Reel (TR)
- Number of Channels: 1
- Pbfree Code: yes
- JESD-609 Code: e3
- Contact Plating: Tin
- Number of Terminations: 3
- Pin Count: 3
- Peak Reflow Temperature (Cel): 260
- Voltage: 60V
- Max Junction Temperature (Tj): 150°C
- REACH SVHC: Unknown
- Element Configuration: Single
- Current: 15A
- Power Dissipation: 200mW
- Technology: MOSFET (Metal Oxide)
- Transistor Application: SWITCHING
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Threshold Voltage: 2.1V
- Turn-Off Delay Time: 11 ns
- Vgs(th) (Max) @ Id: 2.5V @ 250μA
- Continuous Drain Current (ID): 115mA
- Subcategory: FET General Purpose Powers
- Weight: 1.437803g
- Additional Feature: LOW THRESHOLD
- Power Dissipation-Max: 200mW Ta
- Rds On (Max) @ Id, Vgs: 7.5 Ω @ 500mA, 10V
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