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- Manufacturer No：MPSA65
- Manufacturer：Central Semiconductor Corp
- Category：Transistors - Bipolar (BJT) - Single
- Datasheet：MPSA65
- SKU：2033143
- Description：Box Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 100mA 625mW 100MHz
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User Guide
MPSA65 Details
Box Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 100mA 625mW 100MHz
MPSA65 Specification Parameters
- Surface Mount: NO
- Mounting Type: Through Hole
- RoHS Status: RoHS Compliant
- Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
- Factory Lead Time: 8 Weeks
- Pin Count: 3
- Qualification Status: Not Qualified
- JESD-609 Code: e0
- Terminal Finish: Tin/Lead (Sn/Pb)
- Element Configuration: Single
- Collector Base Voltage (VCBO): 30V
- Continuous Collector Current: 100mA
- Frequency - Transition: 100MHz
- Emitter Base Voltage (VEBO): 8V
- Polarity: PNP
- Current - Collector Cutoff (Max): 100nA ICBO
- Power Dissipation: 625mW
- HTS Code: 8541.21.00.95
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100μA, 100mA
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
- Number of Elements: 1
- Part Status: Obsolete
- Peak Reflow Temperature (Cel): NOT SPECIFIED
- Number of Terminations: 3
- Pbfree Code: no
- Packaging: Box
- Published: 2012
- Transistor Element Material: SILICON
- Collector Emitter Voltage (VCEO): 30V
- Terminal Position: BOTTOM
- Transition Frequency: 100MHz
- Max Collector Current: 500mA
- Operating Temperature: -65°C~150°C TJ
- Subcategory: Other Transistors
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- JESD-30 Code: O-PBCY-T3
- Transistor Type: PNP - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA 5V
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